PART |
Description |
Maker |
M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32 1048576-bit (131072-word by 8-bit) CMOS static SRAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
M5M44400BRT-6S M5M44400BRT-7S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM 快速页面模194304位(1048576 - Word位)动态随机存储器
|
Mitsubishi Electric, Corp.
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M5M51008BKV-15VL M5M51008BKV-15VLL M5M51008BKV-70V |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http:// Maxwell Technologies, Inc
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K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5 |
1048576-bit (131072-word by 8-bit) CMOS static RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word8位)的CMOS静态RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
MX27L1000 MX27L1000MC-12 MX27L1000MC-15 MX27L1000M |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDSO32 1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 TRIM POT 500 OHM 3MM SQUARE SMD TRIM POT 50K OHM 3MM SQUARE SMD
|
MACRONIX INTERNATIONAL CO LTD Macronix International Co., Ltd. MCNIX[Macronix International]
|
M5M51008CFP-70HI |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
MITSUBISHI
|
M5M51008BFP-10VL M5M51008BFP-10VLL M5M51008BFP-12V |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|